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  fea tures phototransistor output mechanical switch replacement printed circuit board mounting enhanced signal to noise ratio lever force options de scrip tion the OPB680 consists of an npn phototransistor and an infrared emitting diode in a molded plastic housing. the phototransistor has an enhanced low current roll-off which improves contrast ratio and immunity to background irradiance. a lever arm actuated flag interrupts the light beam, switching the output between states that can readily drive logic gates. the lever can be actuated by a passing paper sheet without damaging the paper edge. the OPB680-20 has the same features as the OPB680 with an increased lever operating force. this feature prevents false triggering due to incidental contact in door sensing and other heavy duty applications. customized lever arms and additional spring torques can be designed for specific applications. ab so lute maxi mum rat ings (t a = 25 o c un less oth er wise noted) stor age and op er at ing tem pera ture . . . . . . . . . . . . . . . . . . . . . . . . -40 o c to +100 o c lead sol der ing tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 o c in put di ode: for ward dc cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 ma peak for ward cur rent (1 m s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 a re verse dc volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 v power dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mw (2) out put pho to tran sis tor: collector- emitter volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 v emit ter re verse cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 ma col lec tor dc cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 ma power dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mw (3) notes: (1) rma flux is recommended. duration can be extended to 10 sec. max. when flow soldering. max. 20 grams force may be applied to leads when soldering. (2) derate linearly 1.33 mw/ o c above 25 o c. (3) derate linearly 2.0 mw/ o c above 25 o c. (4) ?on? condition exists when the lever arm is in the rest position (16 o from vertical) as shown in the figure. (5) ?off? condition exists when the lever arm is deflected clockwise 8 o 3 o from the rest position (16 o from vertical) as shown in the figure. maximum allowable deflection is 35 o from the rest position. prod uct bul le tin OPB680 april 1998 slotted optical flag switch types OPB680, OPB680-20 op tek tech nol ogy, inc. 1215 w. crosby road car roll ton, texas 75006 (972)323- 2200 fax (972)323- 2396 23
types OPB680, OPB680-20 op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. op tek tech nol ogy, inc. 1215 w. crosby road car roll ton, texas 75006 (972)323- 2200 fax (972)323- 2396 elec tri cal char ac ter is tics (t a = 25 o c un less oth er wise noted) sym bol pa rame ter min max units test con di tions in put di ode: v f forward voltage 1.60 v i f = 10 ma i r reverse current 100 m a v r = 3.0 ma out put pho to tran sis tor: v (br)ceo collector-emitter breakdown voltage 30 v i c = 100 m a i eco emitter reverse current 100 m a v ec = 0.4 v i ceo collector-emitter dark current 100 m a v ce = 5 v cou pled: v sat saturation voltage 0.40 v i f = 10 ma, i c = 100 m a i c(on) on-state collector current 600 m a i f = 10 ma, v ce = 5 v me chani cal: f op operating force OPB680 1.5 g measured at end of lever OPB680-20 20 g measured at end of lever cycles operating cycles 100 k cycles i f - forward current - ma forward current vs. forward voltage input diode collector dark current vs. ambient temperature t a - ambient temperature - o c normalized output current vs. ambient temperature t a - ambient temperature - o c rise and fall time vs. load resistance r l - load resistance - w normalized output current vs. forward current i f - forward current - ma i f @ 500 ms pulse width v ce = 5 v i f = 0 ma v ce = 5 v i f = 10 ma normalized to t a = 25 o c i f = 10 ma (50% duty cycle) v cc = 5 v v ce = 5 v normalized to i f = 10 ma normalized forward voltage vs. ambient temperature t a - ambient temperature - o c v ce = 5 v i f = 10 ma normalized to t a = 25 o c t r t f 24


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